Title :
Phonon-induced transverse-mode coupling in double-gate transistor
Author :
Cavassilas, N. ; Bescond, M. ; Michelini, F.
Author_Institution :
Ultimate Silicon Devices Dept., IM2NP, Marseille, France
Abstract :
In this work we present a quantum transport model considering the electron-phonon scattering within the Non-Equilibrium Green Function formalism. The model which explicitly considers transverse mode coupling is applied to study the electronic transport in double-gate transistors. Original underlying behaviors due to transverse-mode coupling related to phonon are then reported.
Keywords :
Green´s function methods; MOSFET; electrical conductivity; electron-phonon interactions; phonons; double-gate transistor; electron-phonon scattering; electronic transport; nonequilibrium Green´s Function Formalism; phonon-induced transverse-mode coupling; quantum transport model; Couplings; Electron optics; Logic gates; Optical scattering; Phonons; Transistors; double-gate transistors; electron-phonon scattering; quantum transport;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677951
