Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction

We predict the possibility of shot noise enhancement in defect-free Carbon Nanotube Field Effect Transistors, through a numerical investigation based on Monte Carlo simulations of randomly injected electrons from the reservoirs and the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green´s functions formalism. Such enhancement can be explained by a positive correlation between holes trapped in quasi-bound states in the channel valence band and thermionic electrons injected from the source and can yield a remarkable Fano factor at room temperature equal to 1.22.