• DocumentCode
    1892425
  • Title

    Monte Carlo study of transport properties in junctionless transistors

  • Author

    Vitale, Wolfgang ; Mohamed, Mohamed ; Ravaioli, Umberto

  • Author_Institution
    Beckman Inst. for Adv. Sci. & Technol., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper applies the Monte Carlo method to study junctionless transistors in order to define trade-offs in the configuration of the channel and compare the results with conventional MOS transistors.
  • Keywords
    MOSFET; Monte Carlo methods; semiconductor device models; transport processes; MOS transistor; Monte Carlo method; channel; junctionless transistor; transport property; Doping; Energy barrier; Junctions; Logic gates; Monte Carlo methods; Silicon; Transistors; Junctionless transistors; Monte Carlo; nanoscale; phonons; short-channel effects; transport;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677969
  • Filename
    5677969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1892425