New packaging concepts and physics-based simulation approach for low-voltage power MOSFETs lead to performance improvement in advanced DC-DC converters

This paper deals with the design optimization of a strip-based low-voltage power MOSFET devoted to synchronous rectifier applications. By performing exhaustive characterizations and accurate process simulations based on a two-dimensional model of the power MOSFET structure, optimization of the main electrical static and dynamic characteristics has been achieved in order to satisfy the application requirements. The MOSFET structure is based on a strip geometry layout, which allows reaching an excellent trade-off between the on-resistance and the gate charge in comparison with other modern technologies. Advanced mixed-mode simulations have been exploited to derive the optimal design of MOSFET devices looking for the application in voltage regulator modules. In order to confer validity to the simulation approach adopted in this paper, an experimental analysis has been carried out to evaluate the level of improvement achieved on the converter performances. Discussion of the thermal behavior is done as well.