Title :
Performance of a discontinuous Galerkin solver for semiconductor boltzmann equations
Author :
Cheng, Yingda ; Irene, M.G. ; Majorana, Armando ; Shu, Chi-Wang
Author_Institution :
Dept. of Math., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We present the effectiveness and competitiveness of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. In particular, we show that the scheme can maintain reasonable accuracy even with rather coarse meshes, hence providing a good alternative to the traditional DSMC solvers. Comparative studies for one-dimensional devices and simulations on a 2D double gate MOSFET are provided.
Keywords :
Boltzmann equation; Galerkin method; MOSFET; Poisson equation; electron transport theory; 2D double gate MOSFET; BP system; Boltzmann-Poisson system; DSMC solvers; coarse meshes; deterministic computations; discontinuous Galerkin solver; electron transport; one-dimensional devices; semiconductor Boltzmann equations; semiconductor devices; Computational modeling; Logic gates; MOSFET circuits; Mathematical model; Moment methods; Semiconductor devices; Transient analysis;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677973
