Title :
Schred V2.0: Tool to model MOS capacitors
Author :
Kannan, Gokula ; Vasileska, Dragica
Author_Institution :
Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
In this paper we present SCHRED V2.0 to the scientific community. This simulation tool allows modeling of MOS capacitors with silicon and strained-Si substrates with arbitrary crystallographic directions. The tool can also model any material whose conduction band model is represented with three significant valleys. It is also capable of modeling a MOS capacitor with High-K Dielectric. Simulation results are presented which illustrate the versatility of the tool.
Keywords :
MOS capacitors; high-k dielectric thin films; MOS capacitors; Schred V2.0; Si; arbitrary crystallographic directions; high-k dielectric; Capacitance; High K dielectric materials; MOS capacitors; Mathematical model; Semiconductor process modeling; Silicon; Symmetric matrices; ID Schrodinger-Poisson solvers; MOS capacitors; quantum-mechanical size quantization effect;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677977
