DocumentCode
1892874
Title
Rough interfaces in THz quantum cascade lasers
Author
Kubis, Tillmann ; Klimeck, Gerhard
Author_Institution
Network for Comput. Nanotechnol., Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear
2010
fDate
26-29 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
The impact of interface roughness scattering on the device performance of state-of-the-art THz quantum cascade lasers is theoretically analyzed using the non-equilibrium Green´s function formalism. It is shown that for a particular direct transition QCL design style rough interfaces hardly change the electronic energy spectrum, but dramatically reduce the occupation inversion and the optical gain. A spatial separation leading to a diagonal transition laser, leads in contrast to a limited sensitivity to interface roughness. Diagonal transition QCL designs result in a better device performance and an improved reliability with respect to interface roughness induced by growth quality variations.
Keywords
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; laser reliability; light scattering; masers; quantum cascade lasers; GaAs-Al0.15Ga0.85As; QCL design; THz quantum cascade lasers; diagonal transition laser; electronic energy spectrum; interface roughness scattering; limited sensitivity; nonequilibrium Green´s function formalism; optical gain; reliability; Adaptive optics; Electron optics; Laser transitions; Optical device fabrication; Optical scattering; Quantum cascade lasers; THz quantum cascade laser; charge transport theory; nonequilibrium Green´s functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location
Pisa
Print_ISBN
978-1-4244-9383-8
Type
conf
DOI
10.1109/IWCE.2010.5677986
Filename
5677986
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