• DocumentCode
    1892874
  • Title

    Rough interfaces in THz quantum cascade lasers

  • Author

    Kubis, Tillmann ; Klimeck, Gerhard

  • Author_Institution
    Network for Comput. Nanotechnol., Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The impact of interface roughness scattering on the device performance of state-of-the-art THz quantum cascade lasers is theoretically analyzed using the non-equilibrium Green´s function formalism. It is shown that for a particular direct transition QCL design style rough interfaces hardly change the electronic energy spectrum, but dramatically reduce the occupation inversion and the optical gain. A spatial separation leading to a diagonal transition laser, leads in contrast to a limited sensitivity to interface roughness. Diagonal transition QCL designs result in a better device performance and an improved reliability with respect to interface roughness induced by growth quality variations.
  • Keywords
    Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; laser reliability; light scattering; masers; quantum cascade lasers; GaAs-Al0.15Ga0.85As; QCL design; THz quantum cascade lasers; diagonal transition laser; electronic energy spectrum; interface roughness scattering; limited sensitivity; nonequilibrium Green´s function formalism; optical gain; reliability; Adaptive optics; Electron optics; Laser transitions; Optical device fabrication; Optical scattering; Quantum cascade lasers; THz quantum cascade laser; charge transport theory; nonequilibrium Green´s functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677986
  • Filename
    5677986