DocumentCode :
1892931
Title :
Memory technologies in the nano-era : challenges and opportunities
Author :
Kim, Kinam ; Jeong, Gitae
Author_Institution :
Samsung Electron., Yongin, South Korea
fYear :
2005
fDate :
9-11 May 2005
Firstpage :
63
Lastpage :
67
Abstract :
There have been concerns about how far we can extend the so far so successful conventional semiconductor memories such as DRAM, SRAM and flash memory and what is the future directions of memory development, in this article, we review the key technological limits of conventional memory scaling and the directions to overcome the problem. In addition, we review the technical challenges and opportunities of emerging new memories.
Keywords :
DRAM chips; SRAM chips; flash memories; nanotechnology; DRAM; SRAM; flash memory; memory technology; semiconductor memory; CMOS technology; FinFETs; Flash memory; Interference; Nonvolatile memory; Random access memory; SONOS devices; Silicon; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
Type :
conf
DOI :
10.1109/ICICDT.2005.1502592
Filename :
1502592
Link To Document :
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