DocumentCode
1892995
Title
CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
Author
Velasco-Velez, J.J. ; Doll, T. ; Chaiyboun, A. ; Wilbertz, C. ; Woellenstein, J. ; Bauersfeld, M.
Author_Institution
Inst. for Physic, Johannes-Gutenberg-Univ., Mainz
fYear
2008
fDate
26-29 Oct. 2008
Firstpage
106
Lastpage
109
Abstract
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.
Keywords
CMOS integrated circuits; annealing; gas sensors; CMOS compatible field effect nanoscale gas sensor; Fokker-Planck; Poisson; Wolkenstein; annealing models; plausible Drift explanation; Annealing; Contacts; Electrons; Gas detectors; Insulation; Laplace equations; Poisson equations; Substrates; Temperature sensors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2008 IEEE
Conference_Location
Lecce
ISSN
1930-0395
Print_ISBN
978-1-4244-2580-8
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2008.4716394
Filename
4716394
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