The effect of TCA on SIMOX material quality and device performance

Author

Allen, L.P. ; Anc, M.J. ; Cordts, B.F. ; Campisi, G. ; Sandow, P.M.

Author_Institution

Ibis Technol. Corp., Danvers, MA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

72

Lastpage

73

Abstract

High temperature annealing of the as-implanted material has proven to be critical for the formation of low defect SIMOX (separation by implanted oxygen) SOI (silicon-on-insulator). The presence of TCA (1,1,1-trichloroethane) in the annealing ambient and its effect on SIMOX material properties are under investigation. A linear design-of-experiment for annealing which includes two stages of TCA in the anneal has been performed. Three responses of the material with respect to the TCA incorporation were modeled: (1) silicon and BOX defects; (2) heavy metal incorporation and behavior; and (3) submicron CMOS transistor radiation hardness response. As compared with a no-TCA standard, etching studies reveal that the defect density of the silicon is reduced with the presence of the TCA during the anneal. It is also shown that a minute amount of TCA introduced in the initial stage of the anneal is sufficient to reduce the defect density

Keywords

annealing; integrated circuit technology; radiation hardening (electronics); semiconductor-insulator boundaries; 1,1,1-trichloroethane; BOX defects; SIMOX; SOI; Si defects; TCA; annealing ambient; defect density; device performance; etching studies; heavy metal incorporation; high temperature annealing; material quality; radiation hardness response; submicron CMOS transistor; Annealing; Electron devices; Etching; Inorganic materials; Laboratories; Material properties; Scanning electron microscopy; Semiconductor device modeling; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162862

Filename

162862