Title :
A 1mm2 flip-chip SP3T switch and low noise amplifier RFIC FEM for 802.11b/g applications
Author :
Hale, Cody ; Baeten, Robert
Author_Institution :
RF Micro Devices, Greensboro, NC, USA
Abstract :
This paper presents a 1mm2 Cu pillar flip chip SP3T/LNA RFIC targeted for use in 802.11b/g front-ends. The SP3T switch enables WLAN transmit/receive and Bluetooth modes of operation. This switch exhibits 0.6dB insertion loss per branch and delivers 802.11g linear performance up to +21dBm output power. A single-stage LNA with a bypass mode is connected after the WLAN Rx branch to increase overall receiver sensitivity and dynamic range. The LNA achieved 1.9dB NF with a typical 11.5dB small-signal gain, including the switch loss. This die occupies only 25% of the footprint of similar existing QFN style WLAN front ends.
Keywords :
Bluetooth; HEMT integrated circuits; flip-chip devices; low noise amplifiers; radiofrequency integrated circuits; receivers; switches; wireless LAN; 802.11b front-ends; 802.11g front-ends; Bluetooth; dynamic range; flip-chip SP3T switch; loss 0.6 dB; low noise amplifier; noise figure 1.9 dB; pHEMT process; quad flat non-lead packages; radiofrequency integrated circuits; receiver sensitivity; wireless LAN; Bluetooth; Dynamic range; Flip chip; Insertion loss; Noise measurement; Performance loss; Power generation; Radiofrequency integrated circuits; Switches; Wireless LAN; Flip-chip; Wireless LAN;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2010 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-4725-1
Electronic_ISBN :
978-1-4244-4726-8
DOI :
10.1109/RWS.2010.5434209
