• DocumentCode
    1894497
  • Title

    100 nm pHEMT MMIC technology

  • Author

    Ayzenshtat, G.I. ; Yushchenko, A.Yu. ; Ivashenko, A.I. ; Bozhkov, V.G.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    601
  • Lastpage
    602
  • Abstract
    A robust and manufacturable high-performance 100-nm gate length AlGaAs/InGaAs pseudomorphic High-Electron Mobility Transistor (pHEMT) process is presented.
  • Keywords
    MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; manufacturable high-performance gate length pseudomorphic high-electron mobility transistor process; pHEMT MMIC technology; size 100 nm to 150 nm; Electronic mail; Gallium arsenide; Indium gallium arsenide; Logic gates; PHEMTs; Robustness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1894497