• DocumentCode
    189457
  • Title

    Conduction of different carriers in (Sr1−xYx)1−zTi1−yFeyO3−δ

  • Author

    Xing-Min Guo ; Ke Shan

  • Author_Institution
    State Key Lab. of Adv. Metall., Univ. of Sci. & Technol. Beijing, Beijing, China
  • fYear
    2014
  • fDate
    2-5 Nov. 2014
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    The donor or acceptor doped SrTiO3 with a perovskite structure (ABO3) has been paid attention as potential candidate materials for oxygen sensors and solid oxide fuel cell. In this work, (Sr1-xYx)1-zTi1-yFeyO3-δ material was fabricated via sol-gel method, and the electronic conductivity and the ionic conductivity of the materials were investigated by ac impedance combining electron-blocking method within 600°950 °C for understanding the conduction of carriers in the materials. The results show that Fe substituted for Ti do not effect on the crystal structure, while Sr is replaced by Y to result obviously the increase of d-spacing of the solid solution. Second, the total electrical conductivity could be fitted well with the Arrhenius formalism at the temperature from 600°C to 900°C, indicating the semi-conductor characters, however the ionic conductivity is not fitted very well. The Fe-doping is favorable for the ionic conduction, while the cation vacancies appear to be not helpful for the ionic conduction in YSTF. The maximal values for the total electrical conductivity are respectively at y=0.5 for Y0.06Sr0.94Ti1-yFeyO3-δ and y=0.4 for Y0.08Sr0.92Ti1-yFeyO3-δ, and the maximal value of the total electron conductivity is at x = 0.07 for YxSr1-xTi0.6Fe0.4O3-δ.
  • Keywords
    carrier mobility; ionic conductivity; sol-gel processing; strontium compounds; titanium compounds; yttrium compounds; (Sr1-xYx)1-zTi1-yFeyO3; Arrhenius formalism; ac impedance combining electron blocking method; acceptor doping; carrier conduction; crystal structure; donor doping; electronic conductivity; ionic conductivity; oxygen sensors; perovskite structure; sol-gel method; solid oxide fuel cell; solid solution; temperature 600 degC to 900 degC; total electrical conductivity; Conductivity; Crystals; Impedance; Impedance measurement; Iron; Sensors; ac impedance; carrier; conductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2014 IEEE
  • Conference_Location
    Valencia
  • Type

    conf

  • DOI
    10.1109/ICSENS.2014.6984990
  • Filename
    6984990