Merged three-terminal magnetotransistor based on the carrier recombination - deflection effect

Author

Leepattarapongpan, Chana ; Penpondee, Naritchapan ; Phetchakul, Toempong ; Phengan, Weera ; Chaowicharat, Eakalak ; Hruanun, Charndet ; Poyai, Amporn

Author_Institution

Thai Microelectron. Center, Chachoengsao

fYear

2008

fDate

26-29 Oct. 2008

Firstpage

399

Lastpage

402

Abstract

This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor structure relies on the combination of difference of base current and collector current in +x and -x directions. As a result, the output voltage and absolute sensitivity to magnetic field will be double. The structure of magnetotransistor consists of one emitter, two collector and two base contacts. The devices can detect magnetic field in vertical direction (B_Z) by relying on the difference between base current and collector current (DeltaI_CB). From the experiment, with emitter current at 5, 8, and 10 mA, the magnetotransistor had the highest sensitivity of 1.125 mV/mT when emitter current was at 10 mA.

Keywords

electron-hole recombination; magnetic field measurement; magnetic sensors; magnetoelectronics; transistors; carrier recombination-deflection effect; current 10 mA; current 5 mA; current 8 mA; magnetic field absolute sensitivity; magnetic field detection; three-terminal magnetotransistor; CMOS process; CMOS technology; Chaos; Magnetic devices; Magnetic fields; Magnetic sensors; Magnetic separation; Microelectronics; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2008 IEEE

Conference_Location

Lecce

ISSN

1930-0395

Print_ISBN

978-1-4244-2580-8

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2008.4716463

Filename

4716463