• DocumentCode
    1894743
  • Title

    Influence of Laser Pulse Duration in Single Event Upset Testing

  • Author

    Douin, A. ; Pouget, V. ; Darracq, F. ; Lewis, D. ; Fouillat, P. ; Perdu, P.

  • Author_Institution
    Univ. Bordeaux 1, Bordeaux
  • fYear
    2005
  • fDate
    19-23 Sept. 2005
  • Abstract
    Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.
  • Keywords
    SRAM chips; high-speed optical techniques; semiconductor device testing; SRAM cell; charge collection mechanisms; laser energy threshold; laser induced single event upset; laser pulse duration; Circuit testing; Laboratories; Laser beams; Laser modes; Optical pulse generation; Optical pulses; Pulse measurements; Random access memory; Semiconductor lasers; Single event upset; Critical charge; Device simulation; Laser testing; Pulse duration; Single Event Upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
  • Conference_Location
    Cap d´Agde
  • ISSN
    0379-6566
  • Print_ISBN
    978-0-7803-9502-2
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2005.4365567
  • Filename
    4365567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1894743