Title :
Leakage current and breakdown characteristics of P-N diodes
Author :
Takata, Ikunori ; Yamada, Tomihisa ; Soejima, Noriyuki
Author_Institution :
Mitsubishi Electric Corp., Itami, Japan
Abstract :
The authors present new empirical characteristics of P-N junction diodes and a theoretical model for them. Platinum or gold diodes have a leakage mechanism which significantly depends on voltage and inappreciably depends on temperature. Besides the usual breakdown phenomenon, the diodes generally show another breakdown phenomenon in the higher-voltage range. In a particular N-layer structure, stable microplasma phenomena can be reproducibly observed
Keywords :
electric breakdown of solids; semiconductor diodes; solid-state plasma; N-layer structure; P-N junction diodes; breakdown characteristics; empirical characteristics; higher-voltage range; leakage mechanism; stable microplasma phenomena; Breakdown voltage; Character generation; Electric breakdown; Feedback; Ionization; Leakage current; P-n junctions; Semiconductor diodes; Space vector pulse width modulation; Stability;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297079
