CMOS integrated aCtive-Pixel Sensor in cryogenic temperature

Author

Salles, Luciana P. ; do Rosario, Pedro V. F. ; de Mello, Artur S. B. ; de Lima Monteiro, Davies W.

Author_Institution

Grad. Program in Electr. Eng., Fed. Univ. of Minas Gerais, Belo Horizonte, Brazil

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

374

Lastpage

377

Abstract

This paper will present experimental results of a slightly modified Active-Pixel Sensor (APS) circuit operating in cryogenic temperatures such as 77 K, 40 K, 20 K and 8.8 K. The optical sensor used was a silicon photodiode with its integrated electronics in a CMOS 0.35 μm technology. Active pixel circuitry with a small number of transistors is important and widely used in image sensors. A modified APS with five transistors was designed and tested under visible light at low temperatures in order to assess its hybrid further use with III-V infrared quantum detectors, which operate at these temperatures.

Keywords

CMOS image sensors; III-V semiconductors; cryogenic electronics; infrared detectors; optical sensors; photodiodes; CMOS integrated active pixel sensor; active pixel circuit; cryogenic temperature; infrared quantum detector; optical sensor; silicon photodiode; size 0.35 mum; CMOS integrated circuits; Logic gates; Optical design; Optical imaging; Optical sensors; Optical variables measurement; Temperature sensors; Active Pixel Sensor; CMOS analog integrated circuits; cryogenic circuits; integrated optoelectronics; low temperature; optical sensor; photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985012

Filename

6985012