The 3rd generation IGBT toward a limitation of IGBT performance

Author

Otsuki, M. ; Momota, S. ; Nishiura, A. ; Sakurai, K.

Author_Institution

Fuji Electric Co. Ltd., Nagano, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

24

Lastpage

29

Abstract

The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The device has overcurrent protection, and an average short circuit withstand capability of 30 μs was obtained. An almost 40% reduction in the switching loss has been realized, as compared with conventional IGBT modules, for a PWM (pulse width modulated) inverter application

Keywords

insulated gate bipolar transistors; invertors; power transistors; semiconductor switches; 100 A; 150 ns; 600 V; PWM invertor application; fall-time; inductive-load turn-off; on-state voltage drop; overcurrent protection; short circuit withstand capability; switching loss; third-generation IGBT; Circuits; Home appliances; Insulated gate bipolar transistors; Low voltage; Metalworking machines; Motor drives; Numerical simulation; Performance loss; Production facilities; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297101

Filename

297101