Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing

Author

De Marcellis, Andrea ; Reig, C. ; Cubells, M.D. ; Madrenas, J. ; Cardoso, F. ; Cardoso, S. ; Freitas, P.P.

Author_Institution

Dept. of Phys. Chem. Sci., Univ. of L´Aquila, L´Aquila, Italy

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

444

Lastpage

447

Abstract

This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 μm CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 μA.

Keywords

CMOS integrated circuits; application specific integrated circuits; electric current measurement; giant magnetoresistance; magnetic sensors; CMOS ASIC technology; giant magnetoresistance sensors; low temperature post-process; microelectronic structures; noninvasive indirect electric current sensing; size 0.35 mum; submA current sensing; CMOS integrated circuits; Current; Current measurement; Magnetic sensors; Resistance; ASIC; CMOS compatible; GMR; electric current sensor; integrated circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985030

Filename

6985030