Title :
A new double epitaxial layer dielectric isolation technology for HVICs
Author :
Narayanan, E. M Sankara ; Amaratunga, G. ; Milne, W.I.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A novel double epitaxial layer dielectric isolation (DELDI) technology suitable for high-voltage integrated circuits (HVICs) is presented. The application of the reduced surface field (RESURF) concept to enhance the breakdown voltage of a lateral double-diffused MOS (LDMOS) structure employing the DELDI technology is studied in detail. The breakdown voltage behavior of a DELDI structure is similar to that of an equivalent junction-isolated structure. The performances of various lateral power MOS controlled devices such as the LDMOS and lateral insulated gate bipolar transistors employing the DELDI technology are compared with those of their counterparts employing the conventional single layer DI technology. The performance of a lateral-emitter-switched thyristor structure using both technologies is examined. The performance of a new lateral-transistor-controlled thyristor is discussed
Keywords :
SIMOX; electric breakdown of solids; insulated gate bipolar transistors; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; power transistors; semiconductor epitaxial layers; thyristors; DELDI technology; SIMOX wafer; breakdown voltage; double epitaxial layer dielectric isolation technology; high-voltage integrated circuits; lateral double-diffused MOS; lateral insulated gate bipolar transistors; lateral power MOS controlled devices; lateral-emitter-switched thyristor; lateral-transistor-controlled thyristor; performances; reduced surface field; Dielectric devices; Dielectric substrates; Epitaxial layers; Insulated gate bipolar transistors; Integrated circuit technology; Isolation technology; Logic circuits; Logic devices; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297114
