DocumentCode :
1895481
Title :
Parameter optimization for wafer probe using simulation
Author :
Liu, Yong ; Desbiens, Don ; Luk, Timwah ; Irving, Scott
Author_Institution :
Fairchild Semicond. Corp., South Portland, ME, USA
fYear :
2005
fDate :
18-20 April 2005
Firstpage :
156
Lastpage :
161
Abstract :
This paper presents the parameter simulation for wafer probe test by FEA modeling with consideration of different probe over travel (OT) distances, different movements along the contact surface of probe and bond pad, different contact friction coefficients, different shapes of the probe tip and diameters. Our goal is to find an optimized solution for probe test that will minimize the stresses in the structure under the bond pad, and eliminate failures. In the probe test modeling, a non-linear finite element contact model is developed for different probe tip geometry shapes. In addition, comparison between probe test damage and wire bonding failure is made to show how the degree of damage to both probe test and wire bonding on the same bond pad structures.
Keywords :
bonding processes; electronics packaging; failure analysis; finite element analysis; integrated circuit testing; parameter estimation; probes; wafer bonding; bond pad structure; contact friction coefficient; finite element analysis; nonlinear finite element contact model; parameter optimization; parameter simulation; probe movements; probe over travel distances; probe test damage; probe test modeling; wafer probe; wire bonding failure; Finite element methods; Friction; Probes; Semiconductor device modeling; Shape; Solid modeling; Stress; Testing; Wafer bonding; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005. EuroSimE 2005. Proceedings of the 6th International Conference on
Print_ISBN :
0-7803-9062-8
Type :
conf
DOI :
10.1109/ESIME.2005.1502792
Filename :
1502792
Link To Document :
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