DocumentCode
1895590
Title
Extremely high-Q tunable inductor for Si-based RF integrated circuit applications
Author
Pehlke, D.R. ; Burstein, A. ; Chang, M.F.
Author_Institution
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
63
Lastpage
66
Abstract
A novel tunable inductor with an extremely high Q is described. The inductor consists of coupled RF and drive coils, which employs phase shifting of the mutual components and demonstrates measured results of over 100% inductance tuning and a significant decrease in resistive losses resulting in a measured Q of about 2000.
Keywords
CMOS integrated circuits; Q-factor; UHF integrated circuits; inductors; losses; silicon; thin film devices; tuning; Si; Si-based RF integrated circuit; UHF IC; coupled RF/drive coils; high-Q tunable inductor; mutual components; phase shifting; resistive losses reduction; Application specific integrated circuits; Coils; Geometry; Inductance; Mutual coupling; Q factor; Radio frequency; Radiofrequency integrated circuits; Thin film inductors; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.649459
Filename
649459
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