Title :
A three-phase inverter IC for AC220 V with a drastically small chip size and highly intelligent functions
Author :
Sakurai, Naoki ; Nemoto, Minehiro ; Arakawa, Hidetoshi ; Sugawara, Yoshitaka
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
Abstract :
A three-phase inverter IC for a 220-V AC line with highly intelligent functions has been fabricated using new high-voltage devices and a process which is compatible with a conventional 3-μm CMOS process. This process can greatly reduce the chip size of the IC. Components developed for this inverter IC include a lateral insulated-gate bipolar transistor (LIGBT) with a low on-state voltage, a high-speed and large SOA, and a soft and fast recovery diode (SFD) with a low forward voltage drop and good recovery characteristics. The inverter is a high-voltage power IC of the 550V/1-A class and, when supplied from the 220-V line, can control a brushless motor, using a 20-kHz PWM (pulsewidth modulation) frequency over a wide range of motor rotating speeds
Keywords :
BiCMOS integrated circuits; invertors; power integrated circuits; pulse width modulation; 220 V; 3 micron; AC line; CMOS process; PWM; brushless motor; chip size; forward voltage drop; intelligent functions; lateral insulated-gate bipolar transistor; motor rotating speeds; recovery characteristics; soft and fast recovery diode; three-phase inverter IC; Bipolar integrated circuits; Brushless motors; CMOS integrated circuits; CMOS process; High speed integrated circuits; Insulated gate bipolar transistors; Insulation; Low voltage; Pulse width modulation inverters; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297144
