• DocumentCode
    1896468
  • Title

    Research of GaN PHEMT LNA input power endurance

  • Author

    Krutov, A.V. ; Rebrov, A.S.

  • Author_Institution
    FSUE RPC “Istok”, Fryazino, Russia
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    794
  • Lastpage
    795
  • Abstract
    The results of theoretical and experimental research of power endurance of LNA on GaN transistors are presented. The measured microwave parameters are given.
  • Keywords
    III-V semiconductors; gallium compounds; low noise amplifiers; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power HEMT; wide band gap semiconductors; GaN; PHEMT LNA input power endurance; microwave parameter measurement; Electronic mail; Gallium arsenide; Gallium nitride; Microwave circuits; PHEMTs; Robustness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1896468