A new approach to current-DLTS in enhancement-mode MOSFET´s: application to SIMOX devices

Author

Haddara, H. ; Elewa, M.T. ; Cristoloveanu, S.

Author_Institution

Dept. of Electron. & Comput. Eng., Ain Shams Univ., Cairo, Egypt

fYear

1991

fDate

1-3 Oct 1991

Firstpage

98

Lastpage

99

Abstract

The current-DLTS in enhancement-mode MOSFETs is an adequate and suitable technique for the characterization of deep traps in thin SOI films. An approach is proposed which improves the modeling of the transient current by including a time-dependent mobility law and provides a modified/simplified measurement technique which avoids temperature scanning. CMOS devices have been fabricated on partially-depleted SIMOX films. Measurements have been performed on five-terminal transistors in order to avoid the parasitic influence of the current overshoot

Keywords

deep level transient spectroscopy; electron traps; hole traps; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; CMOS devices; MOSFETs; SIMOX devices; Si; characterization; current-DLTS; deep traps; enhancement-mode; measurement technique; modeling; partially-depleted SIMOX films; thin SOI films; time-dependent mobility law; transient current; Application software; Electron traps; Equations; Integrated circuit modeling; Linear predictive coding; MOSFET circuits; Measurement techniques; Space vector pulse width modulation; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162875

Filename

162875