Title :
Charge sharing study in the case of neutron induced SEU on 130 nm bulk SRAM modeled by 3-D Device Simulation
Author :
Mérelle, T. ; Serre, S. ; Saigné, F. ; Sagnes, B. ; Gasiot, G. ; Roche, Ph. ; Carrière, T. ; Palau, M.C.
Author_Institution :
Univ. de Montpellier, Montpellier
Abstract :
The charge sharing quantification in the case of neutron induced SEUs in a 130 nm bulk SRAM is presented. Conclusions on its contribution to the soft errors sensitivity evaluation using Monte-Carlo codes are underlined.
Keywords :
Monte Carlo methods; SRAM chips; neutron effects; 3-D Device Simulation; Monte-Carlo codes; SRAM; charge sharing quantification; neutron induced soft error upset; soft errors sensitivity; Alpha particles; Analytical models; Consumer electronics; Electrons; Error analysis; Neutrons; Random access memory; Research and development; Semiconductor device reliability; Silicon; SEU; SRAM; TCAD simulations; bulk; charge sharing; diffusion; neutron;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365661
