DocumentCode
1897131
Title
Effect of buried oxide charge on SOI spreading resistance profile
Author
Karulkar, Pramod C. ; Hillard, Robert J. ; Heddleson, J.M. ; Rai-Choudhury, P. ; Abe, Takeo
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
fYear
1991
fDate
1-3 Oct 1991
Firstpage
102
Lastpage
103
Abstract
The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field effect of the buried oxide charge and can be modeled semiquantitatively
Keywords
X-ray effects; semiconductor-insulator boundaries; SOI; X-ray radiation; bonded samples; buried oxide charge; field effect; spreading resistance profile; Annealing; Charge measurement; Current measurement; Electrical resistance measurement; MOSFETs; Semiconductor films; Silicon; Strontium; Threshold voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162877
Filename
162877
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