Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy

Author

Hasan, Md Rifat ; Hassan, Asif ; Abedin, Minhaz Ibna ; Mondol, Raktim Kumar

Author_Institution

Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2015

fDate

5-7 March 2015

Firstpage

1

Lastpage

4

Abstract

Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless Dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.

Keywords

Fermi level; capacitance; elemental semiconductors; energy gap; fermion systems; monolayers; quantum Hall effect; silicon; Fermi energy level; Si; applied electric energy; charge carrier; electrically tunable electronic devices; electronic properties; graphene isostructure; massless Dirac fermion; quantum Hall effect; quantum capacitance; silicene; silicon monolayer; spin coupling strength; zero band gap; Capacitance; Graphene; Fermi energy; Silicene; energy; quantum capacitance; quantum hall effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical, Computer and Communication Technologies (ICECCT), 2015 IEEE International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-6084-2

Type

conf

DOI

10.1109/ICECCT.2015.7225948

Filename

7225948