Enhanced Fluorescence Emission from Silicon-Rich Nitride Guided Mode Resonance Gratings

Author

Chuantong Cheng ; Chunxia Wang ; Qiang Kan ; Beiju Huang ; Zhenzhen Wang ; Hongsheng Gao ; Hongda Chen

Author_Institution

State Key Lab. of Integrated Optoelectron., Inst. of Semicond., Beijing, China

Volume

32

Issue

3

fYear

2014

fDate

Feb.1, 2014

Firstpage

461

Lastpage

466

Abstract

A one-dimensional subwavelength grating structure is used to enhance the emission from Si nanocrystals embedded in silicon-rich nitride film. The enhancement is attributed to guided-mode resonance effects supported by subwavelength gratings. Both the reflection and photoluminescence experiments are presented aimed at acquiring guided mode spectrum and the emission enhancement factor. A ten-fold enhancement of the fluorescence emission by Si nanocrystals is obtained at the low group velocity band edge of subwavelength gratings. Our results indicate that silicon-rich nitride is a suitable material for the fabrication of high efficiency light emitting structures. The versatility of silicon-rich nitride material system has a far-reaching significance for the realization of optically active complementary metal oxide semiconductor devices.

Keywords

diffraction gratings; fluorescence; nanophotonics; silicon; Si; complementary metal oxide semiconductor device; enhanced fluorescence emission; guided mode resonance effect; guided mode resonance gratings; light emitting structure; one-dimensional subwavelength grating structure; optically active semiconductor device; Couplings; Gratings; Optimized production technology; Photonic band gap; Photonics; Silicon; Band edge effect; Si nanocrystals (NCs); guided-mode resonance; photoluminescence (PL); subwavelength grating (SWG);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2013.2294177

Filename

6680668