Title :
Single device inverter using SOI cross-MOSFET´s
Author :
Gao, M.H. ; Wu, S -H ; Colinge, J.P. ; Claeys, C. ; Declerck, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A single-device inverter is realized using a cross-MOSFET structure which is an N+P+N+ nMOSFET in one direction and a P+P+P+ buried-channel MOSFET underneath in another direction. With appropriate film thickness and doping level, it can operate like an inverter with a supply voltage of 0.7 V, having an input and output logic swing of about 0.4 V. It is concluded that the cross-MOSFET structure described can offer single-device inverter characteristics when appropriate film thickness, doping, and VT are controlled. The optimized VT of the front nMOS is about 0.4 V. The structure can possibly be used for a high-density internal logic unit
Keywords :
MOS integrated circuits; VLSI; integrated circuit technology; integrated logic circuits; logic gates; semiconductor-insulator boundaries; 0.4 V; 0.7 V; SOI; Si-SiO2; buried-channel MOSFET; cross-MOSFET structure; doping level; film thickness; high-density internal logic; logic swing; nMOSFET; single-device inverter; supply voltage; CMOS technology; Current measurement; Doping; Logic devices; Logic testing; MOS devices; MOSFET circuits; Materials testing; Pulse inverters; Voltage;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162895
