DocumentCode
189879
Title
The Effect of Back-chamber Volume on the Surface micromachined Acoustic Sensor
Author
Chang Han Je ; Jaewoo Lee ; Lee, Sung Q. ; Woo Seok Yang
Author_Institution
Nano Scale Electron. & Opt. Integration Res. Dept., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
fYear
2014
fDate
2-5 Nov. 2014
Firstpage
1184
Lastpage
1187
Abstract
We present a study of the back-chamber volume effects on sensitivity and frequency response of the surface micromachined MEMS acoustic sensor. A surface micromachined acoustic sensor, unlike conventional bulk micromachined sensor, has a limited volume of back-chamber formed under the surface of the substrate. An acoustic back-chambers are formed by isotropic etching of the silicon substrate under sensing structures. However, due to structural limitation and process, it is difficult to fabricate sufficient depth. Consequently, the volume of the back-chamber, which is extremely smaller compared to the bulk micromachined acoustic sensor, affects acoustic sensor performance. We fabricated three surface micromachined acoustic sensors which have different membrane diameters, and measured the membrane displacement characteristics while increasing the volume of the back-chamber by controlling the XeF2 etching cycle. As a result, the back-chamber volume of surface micromachined acoustic sensor should not be less than a certain size in order to obtain the desired performance and it depends on the structural parameters such as membrane size and sensing gap.
Keywords
acoustic devices; capacitive sensors; etching; frequency response; membranes; micromachining; microsensors; Si; back-chamber volume effects; frequency response; isotropic etching; membrane diameters; membrane displacement characteristics; sensing gap; sensitivity; silicon substrate; surface micromachined MEMS acoustic sensor; Acoustic sensors; Etching; Frequency response; Micromechanical devices; Xenon; acoustic sernsor; backchamber volume; surface micromachined;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2014 IEEE
Conference_Location
Valencia
Type
conf
DOI
10.1109/ICSENS.2014.6985220
Filename
6985220
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