Title :
The design of a 200 mA oxygen implanter
Author_Institution :
Ibis Technol., Danvers, MA
Abstract :
A very high current oxygen implanter has been developed which is estimated to have four times the throughput capacity of presently available equipment. The design permits much greater automatic control of the process than has been possible up until now. A prototype version of the machine has been constructed. The major goals of the effort to develop a new oxygen implanter were to significantly improve the quality and consistency of SIMOX (separation by implanted oxygen) material, to increase the throughput capacity, and to reduce the eventual cost of manufacturing a SIMOX wafer
Keywords :
ion implantation; oxygen; semiconductor technology; semiconductor-insulator boundaries; 200 mA; SIMOX; Si-SiO2; automatic control; consistency improvement; cost reduction; goals; high current O2 implanter; prototype; quality improvement; throughput capacity; Automatic control; Contamination; Costs; Magnetic materials; Manufacturing; Oxygen; Prototypes; Pumps; Robots; Throughput;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162903
