A neural network synapse cell in 90 nm SOS

Author

Shimabukuro, Randy L. ; Wood, Michael E. ; Shoemaker, Patrick A.

Author_Institution

US Naval Ocean Syst. Center, San Diego, CA, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

162

Lastpage

163

Abstract

A simple four-quadrant analog multiplier has been integrated with a pair of hot carrier injection capacitors by a common floating gate. The resulting nonvolatile analog memory cell is ideal for the implementation of the synapse function in analog artificial neural network circuits. The output curves from a synapse cell fabricated in 90 nm SOS (silicon-on-sapphire) are shown. The dependence of gate current to gate voltage for positive and negative increments, respectively, is presented. It is noted that this dependence is somewhat weaker than that observed in Fowler-Nordheim tunneling

Keywords

MOS integrated circuits; analogue storage; multiplying circuits; neural nets; semiconductor-insulator boundaries; 90 nm; 90 nm SOS; SOS; Si-Al₂O₃; analog artificial neural network circuits; common floating gate; four-quadrant analog multiplier; gate current; gate voltage; hot carrier injection capacitors; neural network synapse cell; nonvolatile analog memory cell; output curves; synapse cell; synapse function; ultra thin SOS I/V curves; Artificial neural networks; Circuits; Electrons; Hot carrier injection; Intelligent networks; MOS capacitors; Neural networks; Nonvolatile memory; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162907

Filename

162907