مرکز منطقه ای اطلاع رساني علوم و فناوري - A Perturbation Approach for One Carrier Semiconductor device Equations

DocumentCode :

1899923

Title :

A Perturbation Approach for One Carrier Semiconductor device Equations

Author :

Chia-Hsiung Kao

fYear :

1993

fDate :

6-7 March 1993

Firstpage :

Keywords :

Convergence; Electrons; Gallium arsenide; Poisson equations; Schottky diodes; Semiconductor devices; Testing; Tin; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on

Conference_Location :

Taipei, Taiwan

Print_ISBN :

0-7803-1225-2

Type :

conf

DOI :

10.1109/SMS.1993.664563

Filename :

664563

Link To Document :