1.2-V 5.8-GHz 90nm CMOS RF power amplifier parameter enhancement techniques

Author

dela Cruz, Sherlyn C. ; Roque, Christian Raymund K. ; Alarcon, Louis P.

Author_Institution

Microelectron. & Microprocessors Lab., Univ. of the Philippines, Diliman, Quezon City, Philippines

fYear

2014

fDate

14-16 April 2014

Firstpage

287

Lastpage

292

Abstract

In this study, two parameter enhancement techniques, Transformer-based power combining and Diode linearization, which can improve the performance of a power amplifier, are implemented on a Class AB PA and then combined to determine their effectiveness. Using a 1.2-V 90nm CMOS process, a test chip containing the power combining network is fabricated and tested. The obtained results show that the power combining technique increases P_OUT by 13dB in exchange of 2X die area increase. The diode linearizer improves 1-dB input compression point by 1.3dB, IM3 up to 5dB and APC first offset frequency WiMAX specification by 10dB. These are all attained in exchange of a 1.1dB insertion loss.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; diodes; integrated circuit testing; power combiners; transformers; APC; CMOS RF power amplifier parameter enhancement technique; WiMAX specification; class AB PA; diode linearization; exchange; frequency; frequency 5.8 GHz; gain 1 dB; gain 1.3 dB; gain 10 dB; gain 13 dB; loss 1.1 dB; size 90 nm; transformer-based power combining network; voltage 1.2 V; Capacitance; Coils; Layout; Linearity; Power amplifiers; Power combiners; WiMAX; CMOS; HFSS; WIMAX; diode linearizer; power amplifier; power combining; transformers; wireless standards;

fLanguage

English

Publisher

ieee

Conference_Titel

Region 10 Symposium, 2014 IEEE

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4799-2028-0

Type

conf

DOI

10.1109/TENCONSpring.2014.6863043

Filename

6863043