DocumentCode
1901036
Title
Single wafer RapidCuring™ of porous low-k materials
Author
Waldfried, Carlo ; Han, Qingyuan ; Escorcia, Orlando ; Margolis, Ari ; Albano, Ralph ; Berry, Ivan
Author_Institution
Axcelis Technol. Inc., Rockville, MD, USA
fYear
2002
fDate
2002
Firstpage
226
Lastpage
228
Abstract
Non-traditional curing solutions that are based on plasma or UV assisted processes have proven advantageous for the curing of low-k materials. The novel curing techniques result in improved low-k material properties, such as increased Young´s modulus and film hardness, as well as in dramatically reduced process times and process temperatures. This paper presents plasma and UV curing solutions for inorganic, organic and hybrid porous low-k films.
Keywords
Young´s modulus; dielectric thin films; hardness; porous materials; UV curing; Young´s modulus; dielectric thin film; hardness; plasma curing; porous low-k material; single wafer RapidCuring; Curing; Inorganic materials; Material properties; Optical films; Organic materials; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Rapid thermal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN
0-7803-7216-6
Type
conf
DOI
10.1109/IITC.2002.1014941
Filename
1014941
Link To Document