Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions

Author

Jacobs, Thieu ; Brennan, Ken ; Carpio, Ron ; Mosig, Karsten ; Lin, Jing-Cheng ; Cox, Henri ; Mlynko, Walt ; Fourcher, Jo ; Bennett, Joe ; Wolf, Josh ; Augur, Rod ; Gillespie, Paul

Author_Institution

Int. Sematech, Austin, TX, USA

fYear

2002

fDate

2002

Firstpage

236

Lastpage

238

Abstract

The need for new low-k materials for interconnect dielectrics to meet the requirements stated in the International Technology Roadmap for Semiconductors offers many new challenges to the etch and clean processes. One significant challenge is the absorbance of process chemicals in open porous low-k films and incomplete removal of these contaminants. Porous low-k voiding is an integration issue recently addressed at International Sematech. This work proposes a mechanism of porous low-k voiding and an analytical technique to detect contamination in porous low-k films at sub 1% levels. Additionally, possible solutions to prevent low-k voiding are presented.

Keywords

chemical analysis; dielectric thin films; etching; impurities; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; porous materials; surface cleaning; voids (solid); cleaning processes; contaminant analytical techniques; contamination detection; etch processes; incomplete contaminant removal; low-k interconnect dielectrics; open porous low-k films; porous low-k material voiding; porous low-k voiding; porous material voids; process chemical absorbance; voiding mechanisms; voiding prevention solutions; Annealing; Ash; Chemicals; Copper; Dielectric materials; Etching; Plasma chemistry; Resists; Semiconductor materials; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International

Print_ISBN

0-7803-7216-6

Type

conf

DOI

10.1109/IITC.2002.1014944

Filename

1014944