• DocumentCode
    1901428
  • Title

    A new ALD-TiN/CoSi2 contact plug process for reliable and low defect density bit-line integration in sub-quarter micron giga-bit DRAM

  • Author

    Park, Seong Geon ; Kang, Sang-Bom ; Choi, Gil Heyum ; Chung, U. In ; Moon, Joo Tae

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    This paper reports a new ALD-TiN/CoSi2 contact plug process for giga-bit scale DRAM bit-line contacts. Using this technology, we obtained a low contact resistance of 315Ω/cnt for BL/N+ and 1518Ω/cnt for BL/P+ in 0.16 μm contacts, as well as a crack-free integration scheme and low level of defect density.
  • Keywords
    DRAM chips; chemical vapour deposition; cobalt compounds; contact resistance; integrated circuit interconnections; integrated circuit reliability; ohmic contacts; titanium compounds; 0.14 to 0.34 micron; ALD-TiN/CoSi2 contact plug process; SEM cross-section; SIMS profile; TEM micrographs; TiN-CoSi2; atomic layer deposition; crack-free integration scheme; giga-bit scale DRAM bit-line contacts; low contact resistance; ohmic layers; reliable low defect density bit-line integration; Contact resistance; Displays; Etching; Heat treatment; Hydrogen; Impurities; Materials testing; Plugs; Thermal resistance; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
  • Print_ISBN
    0-7803-7216-6
  • Type

    conf

  • DOI
    10.1109/IITC.2002.1014957
  • Filename
    1014957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1901428