Title :
Novel gate concepts for MOS devices
Author :
Colinge, Jean-Pierre
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
The classical MOSFET has a single gate electrode located at the top of the device. Recently, multiple-gate devices have been made using SOI substrates. The multiple-gate structure offers the benefit of potentially higher current drive and reduce short-channel effects. This paper compares the advantages of double-gate structures such as the FinFET, triple-gate structures, and "triple-plus"-gate devices such as the pi-gate and omega-gate MOSFETs.
Keywords :
MOSFET; silicon-on-insulator; FinFET; SOI substrates; current drive; double-gate MOSFET; multiple-gate MOSFET; omega-gate devices; pi-gate devices; short-channel effects; single gate electrode MOSFET; triple-gate MOSFET; triple-plus gate devices; Doping; Electrodes; FinFETs; MOS devices; MOSFET circuits; Poisson equations; Semiconductor films; Silicon; Substrates; Transconductance;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356484
