Title :
Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO2 [CMOS device applications]
Author :
Hooker, J.C. ; Perez, N. ; Alèn, P. ; Ritala, M. ; Leskelä, M. ; Roozeboom, F. ; van Berkurn, J.G.M. ; Naburgh, E.P. ; Van Den Heuve, F.C. ; Maes, J.W.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (Φm) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO2. Depositing films at 400 and 500°C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave Φm of 4.7±0.1 eV, also, after high-temperature thermal treatment, with the 400°C deposition giving more reliable electrical performance.
Keywords :
MOSFET; annealing; atomic layer deposition; metallic thin films; tantalum compounds; thermal stability; work function; 4.6 to 4.8 eV; 400 degC; 500 degC; CMOS devices; Ta(Si)N-HfO2; film silicon content; high-frequency capacitance-voltage measurements; high-temperature thermal treatment; metal gate electrodes; optimized pulse sequence deposition; thermal ALD gate electrodes; thermal atomic layer deposition; work function stability; Atomic layer deposition; Chemistry; Dielectric materials; Electrodes; Hafnium oxide; Inorganic materials; Jacobian matrices; Laboratories; Thermal stability; Virtual manufacturing;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356494
