Title :
Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric
Author :
Torii, K. ; Kawahara, T. ; Mitsuhashi, R. ; Ohji, H. ; Mutoh, A. ; Miyazaki, S. ; Kitajima, H. ; Arikado, T.
Author_Institution :
Semicond. Leading Edge Technol., Ibaraki, Japan
Abstract :
The breakdown characteristics of HfAlOx/SiON layered gate dielectrics were investigated. In the case of nCap accumulation or pFET inversion, the majority carrier type is hole and the time to breakdown (TBD) under constant voltage stress (CVS) is determined by the SiON breakdown. In the case of pCap accumulation or nFET inversion, the gate current and breakdown voltage is limited by the SiON, while the TBD is determined by the HfAlOx breakdown. The incident electron energy is found to be an important factor on the TBD distribution.
Keywords :
MOSFET; dielectric thin films; hafnium compounds; hole mobility; semiconductor device breakdown; silicon compounds; tunnelling; CMOS process; HfAlO-SiON; breakdown voltage; constant voltage stress; electron tunnelling; gate current; hole majority carrier type; incident electron energy; layered gate dielectrics; nCap accumulation; pFET inversion; polySi gate FET; time to breakdown distribution; time-dependent dielectric breakdown; Breakdown voltage; Current measurement; Dielectric breakdown; Dielectric thin films; FETs; Hafnium; High K dielectric materials; High-K gate dielectrics; Rapid thermal annealing; Stress;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356496
