Interface characterization methodology for nano-CMOS reliability-process and device reliability monitors

Interface characterization is fundamental to the understanding of device reliability as well as the process monitoring, in particular for the development of an efficient tool for analyzing the hot carrier reliability of ultra-thin gate oxide CMOS devices. This paper will cover an overview of advanced charge pumping (CP), DCIV, Gated-Diode (GD), techniques for the interface characterization of CMOS reliabilities. Its potential use for the device reliability study, and oxide quality monitoring for the state-of-the-art CMOS technology will be presented. More recent developments for nano-CMOS device applications will be demonstrated. Moreover, further development and the roadblocks of these techniques will be addressed.