Magnetoresistance mobility measurements in sub 0.1 μm Si MOSFETs

In this work, for the first time, are reported magnetoresistance (MR) mobility measurements performed on sub 0.1 μm Si MOSFETs. This method enables the carrier mobility to be measured from weak to strong inversion without knowing the device channel length. The MR mobility results are compared to effective mobility data obtained by standard parameter extraction and split C-V techniques. The MR data clearly indicates a significant decrease of the mobility with the gate length reduction. This behavior and the difference between MR and effective mobility values are discussed and interpreted by 2D transport analysis.