Title :
Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Anholt, R. ; Bozada, C. ; Desalvo, G. ; Dettmer, Roger ; Ebel, John ; Gillespie, J. ; Havasy, C.
Author_Institution :
Gateway Modeling Inc., Minneapolis, MN, USA
Abstract :
We describe a decoupled approach to modeling self heating effects in HBTs where we solve for average thermal impedances in three dimensions and solve the electrical problem at three fixed temperatures in two dimensions, then we find the self consistent solution of the temperature rise and current equations. Results are given for thermal impedances of thermally-shunted HBTs. Measured forward Gummel IV curves, IV curves for forced base currents, f/sub t/ values, and breakdown characteristics are compared with the model.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal analysis; GaAs-AlGaAs; HBT; average thermal impedances; breakdown characteristics; current equations; decoupled electrical/thermal modeling; f/sub t/ values; forced base currents; forward Gummel I-V curves; heterojunction bipolar transistors; self heating effects; temperature rise; thermally-shunted HBTs; Computational modeling; Current measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Impedance measurement; Poisson equations; Temperature; Thermal conductivity; Two dimensional displays;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567841
