Title :
Study of electrically active defects in high mobility HfO2 MOSFETs
Author :
Militaru, L. ; Weber, O. ; Müller, M. ; Ducroquet, F. ; Dusciac, D. ; Plossu, C. ; Ernst, T. ; Guillaumot, B. ; Deleonibus, S. ; Skotnicki, T.
Author_Institution :
LPM, INSA-Lyon, Villeurbanne, France
Abstract :
We present a detailed analysis of electrically active gate oxide defects on damascene CMOS devices with a HfO2 gate dielectric and a TiN/W gate electrode. The interface state density (Dit) and the trapped oxide charge (Nit) are determined by 2 and 3-level charge pumping analysis on high-quality nMOS and pMOS transistors. Furthermore, we discuss the influence of the gate stack defects on the carrier mobility in the channel and correlate the reduction of the gate oxide defect density to a mobility improvement for both electrons and holes.
Keywords :
MOSFET; dielectric thin films; electron mobility; hafnium compounds; hole mobility; interface states; leakage currents; HfO2-TiN-W; channel carrier mobility; charge pumping analysis; damascene CMOS devices; electrically active gate oxide defects; electron mobility; gate dielectric leakage; gate electrode; gate oxide defect density reduction; gate stack defects; high mobility MOSFET; hole mobility; interface state density; nMOS transistors; oxide charge density; pMOS transistors; trapped oxide charge; Charge carrier processes; Charge pumps; Dielectric devices; Electrodes; Electron mobility; Hafnium oxide; Interface states; MOS devices; MOSFETs; Tin;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356519
