Title :
Electrical characterization of partially insulated MOSFETs with buried insulators under source/drain regions
Author :
Oh, Chang Woo ; Yeo, Kyoung Hwan ; Kim, Min Sang ; Lee, Chang-Sub ; Choi, Dong Uk ; Kim, Sung Hwan ; Lee, Sung-Young ; Kim, Sung-Min ; Choe, Jung-Dong ; Lee, Yong Kyu ; Yoon, Eun-Jung ; Li, Ming ; Suk, Sung Dae ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam
Author_Institution :
R&D Center, Samsung Electron. Co., Kyungki-Do, South Korea
Abstract :
In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.
Keywords :
MOSFET; PiFET; buried insulator MOSFET; junction area reduction; off-current characteristics; partially insulated MOSFET; partially insulating oxide layers; planar MOSFET scaling; self-induced halo region; self-limited shallow source/drain junctions; short channel effect immunity; Computer aided engineering; Dielectrics and electrical insulation; Energy consumption; Fabrication; Immune system; MOSFETs; Medical simulation; Research and development; Scalability; Silicon on insulator technology;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356532
