Title :
Polysicon Emitter with a Nitrided Interface
Author_Institution :
Swedish Institute of Microelectronics, P.O.Box 1084, S-164 21 Kista, Sweden.
Abstract :
The processing of polysilicon emitters with a nitrided interfacial layer, and their electrical assessment, is described. It is found that nitrided layers can be grown in a reproducible manner, and that their use with a polysilicon emitter can produce working devices with superior characteristics. The uniformity and stability of these devices are also found to be excellent.
Keywords :
Atmosphere; Current measurement; Density measurement; Electric variables measurement; Microelectronics; Stability; Temperature dependence; Temperature distribution; Thickness measurement; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
