Electrical behaviour of Junctions obtained by rapid thermal annealing of BF2 implanted layers

The rapid thermal annealing of BF2 implanted layers has been studied for what concerns its impact on the electrical behaviour of p⁺-n junctions. The evolution of current-voltage characteristics of junctions with increasing temperature of treatment has been followed. Assuming that this evolution reflects the annealing of the implantation damage, a characterization of these junctions versus device temperature provides informations about generation-recombination phenomena related to the residual implantation damage.