Future Outlook of NAND Flash Technology for 40nm Node and Beyond

Author

Kim, Kinam ; Choi, Jungdal

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyungki-Do

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

9

Lastpage

11

Abstract

The NAND flash memory occupied 40% of the total flash memory market with an annual growth rate of 70% in 2004, while NOR flash achieved only more modest growth rate of 30%. It is expected that NAND flash will surpass the market share of NOR flash in the flash market for the first time in 2005. From the viewpoint of market trend, NAND flash will be more popular in future because of more diversified applications such as NHDD (NAND-HDD) and sub-notebook PC storage. In this paper, we review the critical barriers in further scaling down NAND flash to 40nm technology node and beyond. Then, breakthrough technologies are addressed to overcome the barriers. In addition, issues in performance and reliability of the high density NAND flash are discussed

Keywords

NAND circuits; NOR circuits; flash memories; nanoelectronics; 40 nm; NAND flash memory; NAND flash scaling; NAND-HDD; NHDD; NOR flash memory; subnotebook PC storage; Books; Chromium; Consumer electronics; Electrons; Flash memory; Lithography; Packaging; Research and development; Semiconductor devices; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629474

Filename

1629474