DocumentCode
1903586
Title
Advanced III-V HEMT Technology for Microwave and Millimetre-Wave Applications
Author
Long, A.P. ; Eddison, I.G.
Author_Institution
GEC-Marconi Materials Technology Ltd., Caswell, Towester, Northants, NN12 8EQ, United Kingdom
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
389
Lastpage
395
Abstract
This paper describes the current European status of HEMT technology for analogue MMIC applications at microwave and mm-wave frequencies. Results from three European Foundries (GEC-Marconi, Philips and Thomson) will be presented to illustrate the position. The key technology issues will be discussed, including the requirement for high quality epitaxial material. This latter point has been addressed commercially by both MBE (Picogiga) and MOVPE (Epitaxial Products International) growth techniques.
Keywords
Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Lattices; Microwave technology; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435124
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